EDN

Numonyx and Intel Achieve Stacked, Cross Point Phase Change Memory Milestone

Numonyx and Intel announced a breakthrough in the research of phase change memory as researchers demonstrated a 64Mb test chip with a thin film technology that enables the ability to stack multiple ...
Semiconductor Engineering

FeFET Multi-Level Cells For In-Memory Computing In 28nm

A technical paper titled “First demonstration of in-memory computing crossbar using multi-level Cell FeFET” was published by researchers at Robert Bosch, University of Stuttgart, Indian Institute of ...
Design And Reuse

Advancing In-Memory Computing: A Global Effort to Build More Efficient AI Hardware

Emerging non-volatile memory ( NVM) technologies are widely viewed as key enablers of IMC architectures. Among them, Resistive RAM (ReRAM) has attracted significant interest due to its combination of ...
Electronic Design

UMI Scales the Memory Wall in the Chiplet/Multi-Die Era

What are the current challenges involved with incorporating sufficient HBM into multi-die design? How a new interconnect technology can address the performance, size, and power issues that could ...
Semiconductor Engineering

Demonstrating A 2D–0D Hybrid Optical Multi-Level Memory Device Operated By Laser Pulses

A technical paper titled “Probing Optical Multi-Level Memory Effects in Single Core–Shell Quantum Dots and Application Through 2D-0D Hybrid Inverters” was published by researchers at Korea Institute ...